| BS 6493-1.4:1992* IEC 60747-4:1991 | Semiconductor devices. Discrete devices. Recommendations for microwave diodes and transistors. Recommendations for microwave devices |
| BS 6493-1.7:1989* IEC 60747-7:1988 | Semiconductor devices. Discrete devices. Recommendations for bipolar transistors |
| BS 6493-1.8:1985* IEC 60747-8:1984 | Semiconductor devices. Discrete devices. Recommendations for field-effect transistors |
| BS 9350:1976 | Rules for the preparation of detail specifications for semiconductor devices of assessed quality: low noise, low power microwave transistors |
| BS 9364 N007 and N009:1978 | Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS 9364 N008 and N010:1978 | Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
| BS 9364 N011:1978 | Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS 9364 N012:1978 | Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
| BS 9364 N013:1979 | Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS 9364 N016:1979 | Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS 9364 N017:1979 | Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
| BS E9372:1976* CECC 50002:1976 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated bipolar transistors for low and high frequency amplification |
| BS EN 120003:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays |
| BS EN 120004:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output |
| BS EN 150003:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for low frequency amplification |
| BS EN 150004:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: bipolar transistors for switching applications |
| BS EN 150007:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for high frequency amplification |
| BS EN 150012:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: single gate field-effect transistors |
| BS EN 62373:2006 | Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) |
| BS IEC 60747-4-1:2000* QC 750115:2000 | Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification. BDS for microwave field-effect transistors |
| BS IEC 60747-4:2007 | Semiconductor devices. Discrete devices. Microwave diodes and transistors |
| BS IEC 60747-7-5:2005 | Semiconductor devices. Discrete devices. Bipolar transistors for power switching applications |
| BS IEC 60747-7:2000 | Discrete semiconductor devices and integrated circuits. Bipolar transistors |
| BS IEC 60747-8-4:2004 | Discrete semiconductor devices. Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications |
| BS IEC 60747-8:2000 | Discrete semiconductor devices and integrated circuits. Field-effect transistors. Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors |
| BS IEC 60747-9:1998 | Semiconductor devices. Discrete devices. Insulated-gate bipolar transistors (IGBTs) |
| BS IEC 60747-9:2007 | Semiconductor devices. Discrete devices. Insulated-gate bipolar transistors (IGBTs) |
| BS QC 750102:1990* IEC 60747-7-1:1989 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification |
| BS QC 750103:1990* IEC 60747-7-2:1989 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification |
| BS QC 750104:1991 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bipolar transistors for switching applications |
| BS QC 750106:1993* IEC 60747-8-2:1993 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications |
| BS QC 750107:1991 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications |
| BS QC 750112:1988* IEC 60747-8-1:1987 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz |
| BS QC 750114:1996* IEC 60747-8-3:1995 | Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications |
