| BS 6493-1.2:1984* IEC 60747-2:1983 | Semiconductor devices. Discrete devices. Recommendations for rectifier diodes |
| BS 6493-1.3:1986* IEC 60747-3:1985 | Semiconductor devices. Discrete devices. Recommendations for signal (including switching) and regulator diodes |
| BS 6493-1.4:1992* IEC 60747-4:1991 | Semiconductor devices. Discrete devices. Recommendations for microwave diodes and transistors. Section 1.4: Recommendations for microwave devices |
| BS 9300 C199-276:1971 | Detail specification for silicon voltage-regulator diodes |
| BS 9300 C377-378:1971 | Detail specifications for silicon coaxial mixer diodes |
| BS 9300 C379-388:1971 | Detail specifications for silicon stud mounted, power rectifier diodes |
| BS 9300 C405-429:1971 | Detail specifications for silicon voltage-regulator diodes |
| BS 9300 C476:1973 | Detail specification for silicon avalanche rectifier diode |
| BS 9300 C534:1971 | Detail specification for silicon coaxial resistive switching diode |
| BS 9300 C599:1971 | Detail specification for silicon microwave switching diode, rod mounted |
| BS 9300 C667-668:1971 | Detail specification for silicon avalanche rectifier diodes |
| BS 9300 C678-721:1971 | Detail specification for silicon voltage regulator diodes |
| BS 9300 C762:1971 | Detail specification for mixer diodes for use at X-band frequencies |
| BS 9300 C771-772:1971 | Detail specification for coaxial mixer diodes |
| BS 9300 C776-777:1971 | Detail specification for germanium coaxial mixer diodes |
| BS 9300 C778:1971 | Detail specification for a matched pair of germanium coaxial mixer diodes |
| BS 9300 C780-831:1971 | Detail specification for silicon voltage regulator diodes |
| BS 9300 C841-849:1971 | Detail specification for silicon voltage regulator diodes |
| BS 9301 N002:1971 | Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q |
| BS 9305 N001:1972 | Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q |
| BS 9305 N041:1972 | Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q |
| BS 9305 N042:1972 | Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C |
| BS 9305 N044:1974 | Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level |
| BS 9307:1975 | Rules for the preparation of detail specifications for semiconductor devices of assessed quality: variable capacitance diodes for tuning applications |
| BS 9320:1971 | Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave mixer diodes (c.w. operation) |
| BS 9321:1971 | Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave mixer diodes (pulse operation) |
| BS 9322:1971 | Rules for the preparation of detail specifications for semiconductor devices of assessed quality: microwave detector diodes |
| BS 9323:1976 | Rules for the preparation of detail specifications for semiconductor devices of assessed quality: p-i-n microwave passive limiter diodes |
| BS 9324:1976 | Rules for the preparation of detail specifications for semiconductor devices of assessed quality: p-i-n microwave active switching diodes |
| BS 9329:1977 | Rules for the preparation of detail specifications for semiconductor devices of assessed quality: varactor diodes for frequency multiplication |
| BS 9370:1983 | Specification for capability approval of light emitting and infra-red diode arrays of assessed quality: generic data and methods of test |
| BS CECC 50008:1982 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes |
| BS CECC 50009:1982 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes |
| BS E9375:1975* CECC 50005:1975 | Specification. Harmonized system of quality assessment for electronic components. Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes |
| BS EN 120008:1995 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: light emitting diodes and infrared emitting diodes for fibre optic system or sub-system |
| BS EN 150001:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: general purpose semiconductor diodes |
| BS EN 150006:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Variable capacitance diode(s) |
| BS EN 150013:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification: current regulator and current reference diodes |
| BS EN 150014:1997 | Harmonized system of quality assessment for electronic components. Blank detail specification: Thyristor diodes, transient overvoltage suppressors |
| BS EN 150015:1993 | Harmonized system of quality assessment for electronic components. Blank detail specification: unidirectional transient overvoltage suppressor diodes |
| BS EN 61643-321:2002 | Low voltage surge protective devices. Specifications for avalanche breakdown diode (ABD) |
| BS IEC 60747-2:2000 | Discrete semiconductor devices and integrated circuits. Rectifier diodes |
| BS IEC 60747-4-1:2000* QC 750115:2000 | Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification. BDS for microwave field-effect transistors |
| BS QC 750001:1986* IEC 60747-3-1:1986 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Signal diodes, switching diodes and controlled avalanche diodes |
| BS QC 750005:1987* IEC 60747-3-2:1986 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes |
| BS QC 750108:1990* IEC 60747-2-1:1989 | Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A |
| BS QC 750109:1993* IEC 60747-2-2:1993 | Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A |